2MBI 150P-140
2-Pack IGBT
1400V
150A
10000
1000
Switching Time vs. RG
V CC=600V, IC=150A, VGE= ± 1 5 V , Tj= 2 5 ° C
ton
tr
toff
t
100
f
10
1
10
100
Gate Resistance : RG [Ω ]
Forward Voltage vs. Forward Current
400
V =0V
GE
T j=125°C 2 5 ° C
300
200
100
0
0
1
2
3
4
Forward Voltage : VF [V]
1000
800
Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
25
VCC=400, 600, 800V
20
600
15
400
10
200
5
0
0
0
200
400
600
800
1000 1200
Gate Charge: Qg (nC)
1000
Reverse Recovery Characteristics
trr, Irr vs. IF
100
trr= 1 2 5 ° C
trr= 25°C
Irr= 1 2 5 ° C
I = 25°C
rr
10
0
100
200
300
Forward Current : IF [A]
Transient Thermal Resistance
1 0 -1
FWD
IGBT
1 0 -2
1 0 -3
1 0 -3
1 0 -2
1 0 -1
100
Pulse Width : PW [sec]
2500
2000
Reverse Biased Safe Operating Area
+V =15V,
GE
-VGE≤15V,
T j≤125°C,
R G≥ 4,7Ω
SCSOA
(non-repetitive pulse)
1500
1000
500
0
0
RBSOA (Repetitive pulse)
200 400 600 800 1000 1200 1400 1600
Collector-Emitter Voltage : VCE [V]