2MBI 50P-140
2-Pack IGBT
1400V
50A
10000
1000
Switching Time vs. RG
VCC=600V, IC=50A, VGE=±15V, Tj=25°C
ton
tr
toff
t
100
f
10
10
100
Gate Resistance : RG [Ω]
Forward Voltage vs. Forward Current
125
V =0V
GE
100
Tj=125°C 25°C
75
50
25
0
0
1
2
3
4
Forward Voltage : VF [V]
1000
800
Collector Current vs. Collector-Emitter Voltage
Tj=25°C
25
VCC=400, 600, 800V
20
600
15
400
10
200
5
0
0
0
100
200
300
400
Gate Charge: Qg (nC)
1000
Reverse Recovery Characteristics
trr, Irr vs. IF
100
trr= 1 2 5 ° C
trr= 25°C
10
0
Irr= 1 2 5 ° C
Irr= 25°C
25
50
75
100
125
Forward Current : IF [A]
Transient Thermal Resistance
100
1 0 -1
FWD
IGBT
1 0 -2
1 0 -3
1 0 -2
1 0 -1
100
Pulse Width : PW [sec]
Reverse Biased Safe Operating Area
600
+V =15V,
GE
-VGE≤ 15V,
Tj≤ 125°C,
RG≥24Ω
500
SCSOA
400
(non-repetitive pulse)
300
200
100
0
0
RBSOA (Repetitive pulse)
200 400 600 800 1000 1200 1400 1600
Collector-Emitter Voltage : VCE [V]