2N6531 データシートの表示（PDF） - Unspecified
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2N6531 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
2N6531
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(on)-1 Base-Emitter On Voltage
IC= 3A; VCE= 3V
V BE(on)-2 Base-Emitter On Voltage
IC= 8A; VCE= 3V
ICEO
Collector Cutoff Current
VCE= 100V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 3V
hFE-2
DC Current Gain
IC= 8A; VCE= 3V
COB
Output Capacitance
VCB= 10V; IE= 0; f= 1MHz
MIN TYP. MAX UNIT
100
V
3.0
V
3.0
V
2.8
V
4.5
V
1.0 mA
5
mA
500
10000
100
5000
200 pF
SPTECH website：www.superic-tech.com
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