2N6053 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

部品番号

コンポーネント説明

メーカー

2N6053

Silicon PNP Darlingtion Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlingtion Power Transistor

2N6053

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

-60

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA

-2.0

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA

-3.0

V

VBE(sat) Base-Emitter Saturation Voltage

IC= -8A; IB= -80mA

4.0

V

VBE(on) Base-Emitter On voltage

IC= -4A ; VCE= -3V

-2.8

V

ICEO

Collector Cutoff current

ICEX

Collector Cutoff current

IEBO

Emitter Cut-off current

VCE= -30V; IB=0

VCE= -60V;VBE(off)= -1.5V

VCE= -60V;VBE(off)= -1.5V,TC=150℃

VEB= -5V; IC= 0

-0.5

mA

-0.5

-5.0

mA

-2.0

mA

hFE-1

DC Current Gain

IC= -4A ; VCE= -3V

750 18000

hFE-2

DC Current Gain

IC= -8A ; VCE= -3V

100

COB

Output Capacitance

IE=0 ; VCB= -10V; ftest= 0.1MHz

350

pF

SPTECH website：www.superic-tech.com

2

Share Link: