2N6263 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
部品番号
コンポーネント説明
メーカー
2N6263 Datasheet PDF : 2 Pages
| |||
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 4V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 100V; IB= 0
VCE= 120V; VBE= -1.5V
VCE= 120V; VBE= -1.5V, TC=150℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
fT
Current Gain-Bandwidth Product
IC= 0.2A ; VCE= 4V
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 120V,t= 1.0s,Nonrepetitive
2N6263
MIN MAX UNIT
120
V
1.2
V
2.0
V
5
mA
2.0
10
mA
2.0
mA
20
100
3
0.2
MHz
0.167
A
SPTECH website：www.superic-tech.com
2
Share Link: 