2N6124 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6124

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCE(sat) = -0.6V(Max.)@ IC= -1.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -45V(Min)

·Complement to Type 2N6121

APPLICATIONS

·Designed for use in power amplifier and switching circuits

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-45

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

-8

A

IB

Base Current

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-1

A

40

W

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

3.125 ℃/W

SPTECH website：www.superic-tech.com

2N6124

1

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