2N6124 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6124

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2N6124

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -1.0A

VBE(on) Base-Emitter On Voltage

ICEX

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= -1.5A; VCE= -2V

VCE= -45V; VBE(off)= -1.5V

VCE= -45V; VBE(off)= -1.5V;TC= 150℃

VCE= -45V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1.5A; VCE= -2V

hFE-2

DC Current Gain

IC= -4A; VCE= -2V

fT

Current-Gain—Bandwidth Product

IC= -1.0A; VCE= -4V, ftest= 1.0MHz

MIN MAX UNIT

-45

V

-0.6

V

-1.4

V

-1.2

V

-0.1

-2.0

mA

-1.0 mA

-1.0 mA

25 100

10

2.5

MHz

SPTECH website：www.superic-tech.com

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