2N5614 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N5614 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
·DC Current Gain-
: hFE= 70-200@IC= 2.5A
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·Complement to Type 2N5613
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.0
℃/W
SPTECH website：www.superic-tech.com
2N5614
1
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