2N6493 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6493 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlingtion Power Transistor
2N6493
DESCRIPTION
·With TO-3 package
·Low Collector Saturation Voltage-
·High DC current gain
APPLICATIONS
·Designed for use in power, amplifier,and low frequency
switching .
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
15
A
PC
Collector Power Dissipation@TC=25℃ 100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
SPTECH website：www.superic-tech.com
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