2N6275 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6275 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Switching Speed
·High DC Current Gain-
: hFE= 30-120@ IC= 20A
·Low Collector Saturation Voltage-
: VCE(sat)=1.0V(Min.)@ IC= 20A
·Complement to Type 2N6379
APPLICATIONS
·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
140
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
50
A
ICM
Collector Current-Peak
100
A
IB
Base Current-Continuous
20
A
PC
Collector Power Dissipation @TC=25℃ 250
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.7 ℃/W
SPTECH website：www.superic-tech.com
2N6275
1
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