2N6275 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6275 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 50A; IB= 10A
VBE(on) Base-Emitter On Voltage
IC= 20A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 20A; VCE= 4V
hFE-3
DC Current Gain
IC= 50A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
2N6275
MIN MAX UNIT
120
V
1.0
V
3.0
V
1.8
V
3.5
V
1.8
V
50 μA
0.1 mA
50
30 120
10
30
MHz
600 pF
SPTECH website：www.superic-tech.com
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