2N5427 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N5427

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Contunuous Collector Current-IC= 7A

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.2V(Max) @IC= 7A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for switching and wide-band amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation@TC=25℃

40

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

4.37

UNIT

℃/W

2N5427

SPTECH website：www.superic-tech.com

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