2N6686 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6686 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 10A; VCE= 2V
hFE-3
DC Current Gain
IC= 25A; VCE= 2V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
fT
Current Gain-Bandwidth Product
IC= 1A; VCE= 10V
Switching times
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC= 80V; IC= 25A; IB1= -IB2= 2.5A,
tp= 20μs; VBE= -4V
2N6686
MIN MAX UNIT
160
V
1.5
V
1.8
V
0.1 mA
30
25 100
15
300 650 pF
20 100 MHz
0.1 μs
0.6 μs
1.5 μs
0.25 μs
SPTECH website：www.superic-tech.com
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