2N6496 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
メーカー
2N6496 Datasheet PDF : 2 Pages
| |||
^>£.mi-L.onaiL(2toi
*_/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6496
DESCRIPTION
• High Speed-tf= 0.5 u s (Max)
• Low Saturation Voltage-
VCE(sa.)=1.0V(Min.)@lc=8A
APPLICATIONS
• Designed for use in switching regulators, inverters, wide-
band amplifiers and power oscillators in industrial and
commercial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25 C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector- Base Voltage
150
V
VCER
Collector-Emitter Voltage RBE^ 50 Q
130
V
VCEO Collector-Emitter Voltage
110
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
15
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @Tc-25 C 140
W
Tj
Junction Temperature
Tstg
Storage Temperature Range
200
'C
-65-200 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.25 •c/w
^ v,
J
*t
S
^%f\^'^-'ljSSS*^SF' j^
3
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
2
TO-3 package
u
A
*l
i
-J
'
I
-4*. -D ?PL
,_^.
1 J^,
\ \ -, /C/K
trl"
Vv^j
3 ' ' , _ ! "fc-
(I
C
,/ •BH
't
B
1
nun
DIM M IN MAX
B 25 30 26.67
C
7 80 8.30
D
0 90 t 10
E
t 40 1,60
£
1092
H
546
K 11 40 1350
L 16 75 1705
N 19 *0 1962
Ji 100 420
U 3t 00 3020
V
4 30 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I Unsever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
Share Link: 