2N6496 データシートの表示（PDF） - New Jersey Semiconductor
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2N6496 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0
VcER(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; RBe=S 50n
VcE(sat) Collector-Emitter Saturation Voltage lc= 8A; IB=0.8A
VeE(sat) Base-Emitter Saturation Voltage
lc= 8A; IB=0.8A
VEE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
lc= 8A; VCE= 2V
VcE=130V;VBE(0ff)=1 5V
VCE= 130V; VBE(o(f)=1.5V; TC=150'C
VEB= TV; lc= 0
HFE
DC Current Gain
lc= 8A; VCE= 2V
Switching times
tr
Rise Time
ts
Storage Time
tf
Fall Time
Vcc= 30V, lc= 8A , IB1= -lB2= 0.8A,
2N6496
MIN MAX UNIT
110
V
130
V
1.0
V
2.0
V
1.6
V
0.5
mA
10
50
mA
12
100
0.5
us
1.5
us
0.5
us
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