2N6514 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

部品番号

コンポーネント説明

メーカー

2N6514

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2N6514

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ; IB= 0

300

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A

1.5

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 3A

2.5

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

1.7

V

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

3.0 mA

hFE

DC Current Gain

IC= 5A; VCE= 3V

10

50

VCE= 35V,t= 1.0s,Nonrepetitive

3.16

A

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 200V,t= 1.0s,Nonrepetitive 0.1

A

COB

Collector Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

100

pF

SPTECH website：www.superic-tech.com

2

Share Link: