2N6491 データシートの表示（PDF） - New Jersey Semiconductor
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2N6491 Datasheet PDF : 2 Pages
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2N6486, 2N6487.2N6488 NPN / 2N6489, 2N6490.2N6491 PNP
ELECTRICAL CHARACTERISTICS ( Tc • 25°C unless otherwise noted )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
*CEO(SUS)
V
( lc = 100 mA, IB = 0 )
2N6486, 2N6489
40
2N6487, 2N6490
60
2N6488, 2N6491
80
Collector Cutoff Current
( Vel = 20 V, IB = 0 )
( Vel = 30 V, I, = 0 )
( VCE - 40 V, I, = 0 )
'ceo
2N6486, 2N6489
2N6487, 2N6490
2N6488. 2N6491
mA
1.0
1.0
1.0
Collector Cutoff Current
( VCI = 45 V, V,w._ = 1 .5 V )
( VCE = 65 V, Vman = 1 .5 V )
( VCE = 85 V, V = 1 .5 V )
( VCB * 40 V, V..J = 1 .5 V, Te = 1 25°C )
( VCI = 60 V, V,,.,- = 1 .5 V, Te = 125°C )
( Vci = 80 V, VBElolo = 1 .5 V, Tc = 125°C )
2N6486, 2N6489
2N6487, 2N6490
2N6488, 2N6491
2N6486, 2N6489
2N6487, 2N6490
2N6488, 2N6491
Emitter Cutoff Current
( VEB = 5.0 V , lc = 0 )
'cex
,EBO
mA
0.5
0.5
0.5
5.0
5.0
5.0
mA
1.0
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0A,VCI = 4.0V)
(lc = 15A,Vei = 4.0V)
Collector-Emitter Saturation Voltage
(IC = 5.0A, IB = 0.5A)
(IC=15A,IB = 5.0A)
Base-Emitter On Voltage
(IC = 5,OA,VCII = 4.0V)
(IC = 15A,VCS = 4.0V)
hFE
20
150
5.0
VcEfsat)
V
1.3
3.5
"BE(on)
V
1.3
3.5
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
(lc = 1.0A,Vc6 = 4 . 0 V , f = 1.0MHz)
Small-Signal Current Gain
( lc = 1.0 A, VCE =4.0 V, f = 1,0 KHz )
(1) Pulse Test: Pulse width = 300 us , Duty Cycle ^ 2.0%
(2)fT= h,.| -ftMt
<T
5.0
**
15
MHz
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