2N3497 データシートの表示（PDF） - Continental Device India Limited
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2N3497 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
Q
2N3496
2N3497
TO-18
Metal Can Package
General Purpose Transistors for Switching and Linear Applications.
DC Amplilfier & Driver For Industrial Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N3496
2N3497 UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
80
120
V
80
120
V
<---------------------4.5------------------> V
<--------------------100-------------------> mA
<---------------------400------------------- mW
<-------------------2.28-----------------> mW/ºC
<---------------------1.2-----------------> W
<--------------------6.85-----------------> mW/ºC
-65 to +200
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
2N3496
MIN MAX
2N3497
MIN MAX
UNIT
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
BVCEO*
BVCBO
BVEBO
ICBO
IEBO
VCE(Sat)
VBE(Sat)
IC=10mA,IB=0
IC=10µA.IE=0
IE=10µA, IC=0
VCB=50V, IE=0
VCB=90V, IE=0
VEB=3V, IC=0
IC=10mA,IB=1mA
IC=10mA,IB=1mA
80
120
V
80
120
V
4.5
4.5
V
100
nA
100
nA
25
25
nA
0.3
0.35
V
0.6 0.9 0.6 0.9
V
DC curent Gain
hFE IC=0.1mA,VCE=10V
35
35
IC=1mA,VCE=10V
40
40
IC=10mA,VCE=10V
40
40
IC=50mA,VCE=10V
40
40
IC=100mA,VCE=10V*
35
Continental Device India Limited
Data Sheet
Page 1 of 4
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