2N6028 データシートの表示（PDF） - Motorola => Freescale
部品番号
コンポーネント説明
メーカー
2N6028 Datasheet PDF : 6 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Programmable
Unijunction Transistors
Silicon Programmable Unijunction Transistors
. . . designed to enable the engineer to “program” unijunction characteristics such as
RBB, η, IV, and IP by merely selecting two resistor values. Application includes
thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used
in special thyristor applications due to the availability of an anode gate. Supplied in an
inexpensive TO-92 plastic package for high-volume requirements, this package is
readily adaptable for use in automatic insertion equipment.
• Programmable — RBB, η, IV and IP.
• Low On-State Voltage — 1.5 Volts Maximum @ IF = 50 mA
• Low Gate to Anode Leakage Current — 10 nA Maximum
• High Peak Output Voltage — 11 Volts Typical
• Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)
Order this document
by 2N6027/D
2N6027
2N6028
PUTs
40 VOLTS
300 mW
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Power Dissipation
Derate Above 25°C
*DC Forward Anode Current
Derate Above 25°C
*DC Gate Current
Repetitive Peak Forward Current
100 µs Pulse Width, 1% Duty Cycle
*20 µs Pulse Width, 1% Duty Cycle
Non-repetitive Peak Forward Current
10 µs Pulse Width
*Gate to Cathode Forward Voltage
*Gate to Cathode Reverse Voltage
*Gate to Anode Reverse Voltage
*Anode to Cathode Voltage(1)
Operating Junction Temperature Range
*Storage Temperature Range
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 ohms
Anode negative, RGA = open
©MMoottoororolal,aInTc.h1y9r9i5stor Device Data
Symbol
PF
1/θJA
IT
IG
ITRM
ITSM
VGKF
VGKR
VGAR
VAK
TJ
Tstg
A
GK
CASE 29-04
(TO-226AA)
STYLE 16
Value
300
4
150
2.67
±50
1
2
5
40
–5
40
±40
–50 to +100
–55 to +150
Unit
mW
mW/°C
mA
mA/°C
mA
Amps
Amps
Volts
Volts
Volts
Volts
°C
°C
1
Share Link: 