2N4236 データシートの表示（PDF） - Continental Device India Limited
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2N4236 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4234, 2N4235
2N4236
TO-39
Metal Can Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Base Current
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IB
IC
PD
PD
Tj, Tstg
2N4234
40
40
2N4235
60
60
7.0
200
1.0
1.0
5.7
6.0
34
- 65 to +200
2N4236
80
80
UNIT
V
V
V
mA
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL CHARACTERISTICS
Junction to Case
Rth (j-c)
29
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Cut Off Current
ICEO
VCE=30V, IB=0
Collector Cut Off Current
VCE=40V, IB=0
VCE=60V, IB=0
ICEX
VCE=40V, VEB=1.5V
VCE=60V, VEB=1.5V
VCE=80V, VEB=1.5V
TC=150ºC
VCE=30V, VEB=1.5V
VCE=40V, VEB=1.5V
VCE=60V, VEB=1.5V
2N4234
40
1.0
0.1
2N4235
60
1.0
0.1
2N4236
80
1.0
0.1
UNIT
V
mA
mA
mA
mA
mA
mA
1.0
mA
1.0
mA
1.0
mA
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
ICBO VCB=Rated VCBO, IE=0
IEBO
VEB=7V, IC=0
*hFE
IC=100mA, VCE=1V
IC=250mA, VCE=1V
IC=500mA, VCE=1V
IC=1A, VCE=1V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2N4234_4236Rev_1 121004E
Continental Device India Limited
Data Sheet
MIN
40
30
20
10
TYP MAX
0.1
mA
0.5
mA
150
Page 1 of 4
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