2N4239 データシートの表示（PDF） - TT Electronics.

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2N4239

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

TT Electronics. 

SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

2N4239

• VCBO=100V(Min), VCEO=80V(Min)

• Hermetic TO-39 Metal package.

• Ideally suited for General Purpose and

Amplifier Applications

• Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

100V

VCEO

Collector – Emitter Voltage

80V

VEBO

Emitter – Base Voltage

6V

IC

Continuous Collector Current

1.0A

IB

Base Current

0.5A

PD

Total Power Dissipation at TA = 25°C

1.0W

Derate Above 25°C

5.7mW/°C

PD

Total Power Dissipation at TC = 25°C

6W

Derate Above 25°C

34mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols Parameters

RθJA

Thermal Resistance, Junction To Ambient

RθJC

Thermal Resistance, Junction To Case

Min.

Typ.

Max. Units

175 °C/W

29 °C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 8369

Issue 1

Page 1 of 3

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