2N6251 データシートの表示（PDF） - New Jersey Semiconductor
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2N6251 Datasheet PDF : 3 Pages
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2N6249 - 2N6250 - 2N6251
IEBO
Emitter Cutoff Current
VBE=6.0 Vdc, lc=0
Ssecond Breakdown
Collector Current with
VCE=30Vdc
Is/b
base forward biased
t=1.0S non-repetitive
Ssecond Breakdown
Energy with base reverse lc=10AVBE(0^4.0Vdc,
Es/b
biased t=1.0S non-
L - o(J |jn
repetitive
hFE
VcE(SAT)
VBE(SAT)
DC Current Gain
Collector-Emitter
saturation Voltage (1)
.
Base-Emitter saturation
Voltage (1)
lc=10 Adc, VCE=3.0 Vdc
lc=10Adc, IB=1 Adc
lc=1 0 Adc, IB=1 .25 Adc
lc=10AdG, lB=i.67Adc
lc=10Adc, IB=1 Adc
lc=1 0 Adc, IB=1 .25 Adc
ic=iOAdc, lB=1.67Adc
(1) Mesured on a curve tracer (60 Hz full-wave rectified sine wave ).
2N6249
2N6250 -
2N6251
- 1.0 mAdc
2N6249 5.8
2N625() 5.8
-
- Vdc
j 2N6251 5.8
2N6249 2.5
2N6250
—
2J5
-
-
mJ
2N6251 2.5
2N6249 10
50
; 2N6250 8.0 - 50
-
2N6251 6.6
50
2N6249
1.5
2N6250
| 2N6251
2N6249 -
- 1.5 Vdc
1.5
- 2.5
! 2N6250
2N6251 _
2.5 Vdc
_ 2.5
Symbol
fr
tr
,ts
tf
Ratings
Test Condition(s)
Current Gain - Bandwith
Product
VCE=10Vdc, lc=1.0Adc,
ftest = 1 .0 Mhz
Vcc= 200 Vdc, lc= 1 0 A, Duty Cycle <= 2.0% tp= 1 00 |JS
Rise Time
IB1 = IB2=1 .6 Adc
Storage Time
lBi = lB2=1.25Adc
Fall Time
lBi = lB2=1.67Adc
2N6259
2N6250
2N6251
Min Typ MX
2.5 - -
- 2.6
-
3.5
1.0
Unit
MHz
MS
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51 1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
00!
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
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