2N6107 データシートの表示（PDF） - Galaxy Semi-Conductor

部品番号

コンポーネント説明

メーカー

2N6107

PNP Epitaxial Silicon Transistor

Galaxy Semi-Conductor 

Production specification

PNP Epitaxial Silicon Transistor

2N6107

ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-emitter Breakdown Voltage VCEO(SUS) IC=-100mA,IB=0

-70

V

Collector Cut-off Current

ICEO

VCE=-60V,IB=0

-1

mA

Collector Cut-off Current

ICEX

VCE=-80V,VEB(off)=1.5V

-100 mA

Emitter Cut-off Current

IEBO

VEB=-5V,IC=0

DC Current Gain

VCE=-4V,IC=-2A

30

hFE

VCE=-4V,IC=-7A

2.3

Collector-emitter Saturation Voltage VCE(sat)

IC=-7A, IB=-3A

-1

mA

150

-3.5

V

Base-emitter On Voltage

VBE(on)

IC=-7A, VCE=-4V

-3

V

Transition Frequency

Collector Output Capacitance

fT

VCE=-4V, IC=-0.5A

VCB=-10V,IE=0,

Cob

f=1MHz

10

MHz

250

pF

X029

Rev.A

www.gmesemi.com

2

Share Link: