2N3700 データシートの表示（PDF） - Continental Device India Limited

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2N3700

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

2N3700-01

MIN

MAX

Dynamic Characteristics

Small Signal Current Gain

Transition Frequency

Input Capacitance

Output Capacitance

Collector Base Time Constant

Noise Figure

hfe

ft

Cibo

Cobo

rbb'cb'c

NF

*Pulse Test: Pulse Width =300us, Duty Cycle=1%

IC=1mA, VCE=5V

f=1KHz

VCE=10V,IC=50mA,

f=20MHz

VCB=10V, f=1MHz

f=79.8MHz

VCE=10V, IC=100uA

RS=1kohms, f=1kHz

2N3700 2N3701

80-400 30-200

100-400 >80

<60

<12

15-400

-

<60

<12

25-400

4.0

UNIT

MHz

pF

pF

ps

dB

A

B

D

TO-18 Metal Can Package

G

2

1

H

3

L

J

DIM MIN MAX

A 5.24 5.84

B 4.52 4.97

C 4.31 5.33

D 0.40 0.53

E

— 0.76

F

— 1.27

G

— 2.97

H 0.91 1.17

J 0.71 1.21

K 12.70 —

L

45 DEG

21

3

PIN CONFIGURATION

1. EMITTER

2. BASE

3. COLLECTOR

Packing Detail

PACKAGE

STANDARD PACK

Details

Net Weight/Qty

TO-18

1K/polybag

350 gm/1K pcs

INNER CARTON BOX

Size

Qty

3" x 7.5" x 7.5"

5.0K

OUTER CARTON BOX

Size

Qty Gr Wt

17" x 15" x 13.5"

80.0K 34 kgs

Continental Device India Limited

Data Sheet

Page 2 of 3

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