2N6498 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6498 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors 2N6497/6498/6499
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
2N6497
2N6498
2N6499
IC= 25mA; IB= 0
VCE(sat)-1
Collector-Emitter
Saturation Voltage
2N6497
2N6498
2N6499
IC= 2.5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 5A; IB= 2A
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 2.5A ; VCE= 10V
hFE-2
DC Current Gain
IC= 5A ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 0.25A;VCE= 10V;ftest=1.0MHz
Switching Times;Duty Cycle≤2%
tr
Rise Time
tS
Storage Time
tf
Fall Time
VCC= 125V,tp= 0.1ms
IC=2.5A;IB1= -IB2=0.5 A
MIN MAX UNIT
250
300
V
350
1.0
1.25
V
1.5
5.0
V
1.5
V
2.5
V
1.0
mA
10
75
3
5
MHz
1.0
μs
2.5
μs
1.0
μs
SPTECH website：www.superic-tech.com
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