2N2894AC1B.GRPC データシートの表示（PDF） - TT Electronics.
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2N2894AC1B.GRPC Datasheet PDF : 4 Pages
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HIGH SPEED PNP
SILICON BIPOLAR TRANSISTOR
2N2894AC1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CBO(1)
V(BR)CEO(1)
V(BR)EBO(1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -10µA
IC = -10mA
IE = -100µA
IE = 0
IB = 0
IC = 0
ICBO
Collector Cut-Off Current
VCB = -10V
IE = 0
TA = 125°C
IC = -10mA
VCE = -0.3V
hFE(1)
Forward-current transfer ratio
IC = -30mA
VCE = -0.5V
TA = -55°C
IC = -100mA VCE = -1.0V
VCE(sat)(1)
Collector-Emitter Saturation Voltage
IC = -10mA
IC = -30mA
IB = -1.0mA
IB = -3.0mA
IC = -100mA IB = -10mA
VBE(sat)(1)
Base-Emitter Saturation Voltage
IC = -10mA
IC = -30mA
IB = -1.0mA
IB = -3.0mA
IC = -100mA IB = -10mA
Min Typ
-12
-12
-4.5
30
40
20
30
Max Units
V
-100
nA
-10
µA
120
-0.15
-0.19
V
-0.45
-0.98
-1.15
V
-1.50
DYNAMIC CHARACTERISTICS
fT
Current Gain-Bandwidth Product
COBO
CIBO
ton
toff
Output Capacitance
Input Capacitance
Turn-On Time
Turn-Off Time
Notes
(1) Pulse Width < 300µs, Duty Cycle <2%
IC = -30mA
f = 100MHz
VCE = -10V
650
VCB = -5V, IE = 0, 1.0MHz
VEB = -0.5V, IC = 0, 1.0MHz
VCC = -2V
IC = -30mA
IB1 = 1.5mA IB2 = -1.5mA
MHz
4.5
pF
6.0
60
ns
60
Semelab Limited
Telephone +44 (0) 1455 556565
Email: sales@semelab-tt.com
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Website: http://www.semelab-tt.com
Document Number 8519
Issue 1
Page 2 of 4
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