2N5971 データシートの表示（PDF） - New Jersey Semiconductor
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2N5971 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 5A; IB= 0.5A
VcE(sat)-2 Collector-Emitter SaturationVoltage IC=15A;IB=3A
VsE(sat) Base-Emitter Saturation Voltage
lc= 5A; IB= 0.5A
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
hpE-1
DC Current Gain
lc= 5A; VCE= 4V
hFE-2
DC Current Gain
lc=15A;VCE=4V
fr
Current Gain-Bandwidth Product
lc=0.2A;VCE=10V
2N5971
MIN MAX UNIT
80
V
1.0
V
4.0
V
1.8
V
1.0
mA
1.0
mA
1.0
mA
50
150
5
4
MHz
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