MBR30020CTL データシートの表示（PDF） - GeneSiC Semiconductor, Inc.

部品番号

コンポーネント説明

メーカー

MBR30020CTL

Low VF Silicon Power Schottky Diode

GeneSiC Semiconductor, Inc. 

Low VF Silicon Power

Schottky Diode

Features

• High Surge Capability

• Type 20 V VRRM

• Not ESD Sensitive

MBR30020CT(R)L

VRRM = 20 V

IF(AV) = 300 A

Twin Tower Package

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Symbol

Conditions

MBR30020CT(R)L Unit

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Operating temperature

Storage temperature

VRRM

VRMS

VDC

Tj

Tstg

20

V

14

V

20

V

-55 to 150

°C

-55 to 150

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

MBR30020CT(R)L Unit

Average forward current (per pkg)

Peak forward surge current (per leg)

Maximum instantaneous forward voltage (per

leg)

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

IF(AV)

IFSM

VF

IR

TC = 100 °C

tp = 8.3 ms, half sine

IFM = 150 A, Tj = 25 °C

Tj = 25 °C

Tj = 100 °C

RΘJC

300

2000

0.58

3

100

0.40

A

A

V

mA

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

Share Link: