RB480K(2012) データシートの表示（PDF） - ROHM Semiconductor

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RB480K
(Rev.:2012)

Schottky Barrier Diode

ROHM Semiconductor 

Schottky Barrier Diode

RB480K / RB480KFH

RB480K

Datasheet

Application

Low current rectification

Features

1) Ultra small mold type.

(UMD4)

2) Low IR

3) High reliability

Construction

Silicon epitaxial planar

Dimensions (Unit : mm)

2.0±0.2

0.25±

0.1

0.05

E各acリh同ーle寸aドd法とhaもs same dimension

(3)

(2)

0.15±0.05

　Land size figure (Unit : mm)

0.6

(4)

(1)

0.65

0.65

1.3±0.1

0〜0.1

UMD4

1.3

0.7

0.9±0.1

Structure

ROHM : UMD4

JEDEC : SOT-343

JEITA : SC-82

dot (year week factory)

1Pin Mark

Taping specifications (Unit : mm)

4.0±0.1

2.0±0.05

φ1.55±0.05

0.3±0.1

2.2±0.1

4.0±0.1

φ1.1±0.1

1.15±0.1

Absolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive peak)

VRM

Reverse voltage (DC)

VR

Average rectified forward current (*1)

Io

45

V

40

V

100

mA

Forward current surge peak (60Hz・1cyc) (*1) IFSM

Junction temperature

Tj

1

A

125

°C

Storage temperature

Tstg

−40 to +125 °C

(*1) Rating of per diode

Electrical characteristics (Ta= 25°C)

Parameter

Forward voltage

Reverse current

Capacitance between terminals

Symbol Min. Typ. Max. Unit

Conditions

VF1

-

- 0.45 V IF=10mA

VF2

-

- 0.6 V IF=100mA

IR1

-

-

1 μA VR=10V

IR2

-

-

5 μA VR=40V

Ct1

- 6 - pF VR=10V, f=1MHz

Ct2

-

- 25 pF VR=0V

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© 2012 ROHM Co., Ltd. All rights reserved.

1/4

2012.12 - Rev.D

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