DIP Type
Schottky Barrier Rectifier
MBR2035CT thru MBR2060CT
Diodes
■ Features
● Low forward voltage drop
● High surge capability
● Low power loss/High efficiency
PIN2
PIN1 PIN3
10.16 ±0.20
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
1 23
#1
0.35 ±0.10
2.54TYP
[2.54 ±0.20]
(30°)
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
TO-220AB
■ Maximum Ratings and Electrical Characteristics (@TA=25℃ unless otherwise specified)
Pa ra me ter
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
Average Rectified Forwart Current
@ TT = 135℃
Non-repetitive Peak Forward Surge Current 8.3ms half
sine-wave superimposed on rated loat(JEDEC Method)
Forward Voltage TC = 25 ℃
@IF = 10A
@IF = 20A
Forward Voltage TC = 125 ℃
@IF = 10A
@IF = 20A
Peak Reverse Current at
@ TA= 25℃
Rated DC Blocking Voltage
@ TA = 125℃
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Operating and Storage Temperature Range
S ym bol
VRRM
VRM S
VDC
IF(AV)
I FSM
VF
IR
RθJA
Tj
TJ, TSTG
MBR
20 35CT
35
35
35
MBR
204 5CT
M BR
2050 CT
45
50
45
50
45
50
20
MBR
2 060CT
60
60
60
150
0.8
0 .84
0.95
0 .57
0.7
0 .72
0.85
0 .1
0.15
15
1 50
2
-65 to 150
-65 to 175
Unit
V
A
A
V
mA
℃ /W
℃
℃
1
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