BCX71H データシートの表示（PDF） - Continental Device India Limited
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BCX71H Datasheet PDF : 3 Pages
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BCX71G BCX71H
BCX71J BCX71K
Collector current (d.c.)
Base current
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector–emitter cut–off current
VEB = 0; –VCE = 45 V
VEB = 0; –VCE = 45 V; Tamb = 150 °C
Emitter–base cut–off current
IC = 0; –VEB = 4 V
Saturation voltages
–IC = 10 mA; –IB = 0,25 mA
–IC = 50 mA; –lB = 1,25 mA
Transition frequency at f = 100 MHz ·
–VCE = 5 V; –IC = 10 mA
Capacitance at f = 1 MHz
–VCB = 10 V; IE = Ie = 0
Emitter capacitance at f = 1 MHz
–VEB = 0,5 V; IC = Ic = 0
Noise figure at RS = 2 kW
–VCE = 5 V; –IC = 200 mA; B = 200 Hz
D.C. current gain
–VCE = 5 V; –IC = 10mA
hFE
–VCE = 5 V; –IC = 2 mA
hFE
–VCE = 1 V; –IC = 50 mA
hFE
Small-signal current gain
–VCE = 5 V; –IC = 2 mA; f = 1 kHz hfe
Output admittance
–VCE = 5 V; –IC = 2 mA; f = 1 kHz hoe
Base-emitter voltage
–VCE = 5 V; –IC = 2 mA
VBE
–VCE = 5 V; –IC = 10 mA
VBE
–VCE = 1 V; –IC = 50 mA
VBE
–IC
max. 200 mA
–lB
max. 50 mA
Ptot
max. 250 mW
Tstg
–55 to +150 °C
Tj
max. 150 ° C
Rth j–a =
500 K/W
–ICES <
–ICES <
20 nA
20 mA
–IEB0 <
20 nA
–VCEsat 0,06 to 0,25 V
–VBEsat 0,6 to 0,85 V
–VCEsat 0,12 to 0,55 V
–VBEsat 0,68 to 1,05 V
fT
typ. 180 MHz
Cc
typ. 4,5 pF
Ce
typ. 11 pF
F
typ.
2 dB
<
6 dB
BCX71G 71H 71J 71K
>
–
30
40 100
>
120 180 250 380
<
220 310 460 630
>
60 80 100 110
>
125 175 250 350
<
250 350 500 700
typ. 18 24 30 50 mS
0,6 to 0.75 V
typ.
0,65
V
typ.
0,55
V
typ.
0,72
V
Continental Device India Limited
Data Sheet
Page 2 of 3
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