BSR30 データシートの表示（PDF） - TY Semiconductor

部品番号

コンポーネント説明

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BSR30

PNP Medium Power Transistors

TY Semiconductor 

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

DC current gain *

DC current gain *

BSR30

BSR31; BSR33

BSR30

BSR31,BSR33

BSR30

BSR31,BSR33

collector-emitter saturation voltage *

base-emitter saturation voltage *

Transition frequency

* Pulse test: tp = 300 ìs; ä

0.01.

Product specification

BSR30,BSR31,BSR33

Symbol

ICBO

IEBO

Testconditons

IE = 0; VCB = -60 V

IE = 0; VCB = -60 V; Tj = 150

IC = 0; VEB = -5 V

hFE IC = -100 mA; VCE = -5 V;

hFE IC = -100 mA; VCE = -5 V

hFE IC = -500 mA; VCE = -5 V;

VCEsat

VBEsat

fT

IC = -150 mA; IB = -15 mA

IC = -500 mA; IB = -50 mA

IC = -150 mA; IB = -15 mA

IC = -500 mA; IB = -50 mA

IC = -50 mA; VCE = -10 V; f = 100 MHz

Min Typ Max Unit

-100 nA

-50 ìA

-100 nA

10

30

40

120

100

300

30

50

-0.25 V

-0.5 V

-1

V

-1.2 V

100

MHz

hFE Classification

TYPE

Marking

BSR30

BR1

BSR31

BR2

BSR33

BR4

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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