BC807W データシートの表示（PDF） - Infineon Technologies
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BC807W Datasheet PDF : 5 Pages
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BC807W, BC808W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BC807W
45
-
BC808W
25
-
V
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 10 µA, IE = 0
BC807W
50
-
-
BC808W
30
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 100 mA, VCE = 1 V
V(BR)EBO 5
-
-
ICBO
-
- 100 nA
ICBO
-
-
50 µA
IEBO
-
- 100 nA
hFE
hFE-grp. 16
hFE-grp. 25
hFE-grp. 40
-
100 160 250
160 250 400
250 350 630
DC current gain 1)
IC = 500 mA, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
hFE
40
-
-
VCEsat
-
-
0.7 V
VBEsat
-
-
1.2
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-29-2001
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