TIP514 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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TIP514

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A

VBE(on) Base-Emitter On Voltage

IC= -5A; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -75V; IB= 0

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

hFE-1

DC Current Gain

VCB= -150V; IE= 0

VEB= -2.5V; IC= 0

VEB= -5V; IC= 0

IC= -2.5A; VCE= -4V

hFE-2

DC Current Gain

IC= -5A; VCE= -4V

TIP514

MIN MAX UNIT

-150

V

-1.0

V

-2.0

V

-2.2

V

-0.3

mA

-1.0

mA

-0.1

-1.0

mA

30

150

15

SPTECH website：www.superic-tech.com

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