TIP36C データシートの表示（PDF） - Unisonic Technologies

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TIP36C

HIGH POWER TRANSISTORS

Unisonic Technologies 

TIP36C

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage (IE = 0)

VCBO

-100

V

Collector-Emitter Voltage (IB = 0)

VCEO

-100

V

Emitter-Base Voltage (IC = 0)

Collector Current

VEBO

-5

V

IC

-25

A

Collector Peak Current

Base Current

ICM

-50

A

IB

-5

A

Total Dissipation (TC =25°C)

Junction Temperature

PD

125

W

TJ

+150

C

Storage Temperature

TSTG

-65 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER

Thermal Resistance Junction-Case

SYMBOL

MIN

θJC

TYP

 ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)

MAX

1

UNIT

C/W

PARAMETER

Collector Cut-off Current (IE = 0)

Emitter Cut-off Current (IC = 0)

Collector-Emitter Sustaining Voltage (IB = 0)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

DC Current Gain

Transition Frequency

 CLASSIFICATION OF hFE1

RANK

RANGE

SYMBOL

ICBO

IEBO

V(BR)CEO

VCE(SAT)

VBE(ON)

hFE1

hFE2

fT

TEST CONDITIONS

VCB = -100 V

VEB = -5 V

IC = -50 mA

IB = -1.5 A, IC = -15 A

IB = -5 A, IC = -25 A

VCE =-5 V, IC = -5 A

VCE = -5 V, IC = -1.5 A

VCE = -4 V, IC = -15 A

VCE = -5 V, IC = -1 A

R

55~110

MIN TYP MAX UNIT

-10 μA

-10 μA

-100

V

-1.8 V

-4 V

-1.5 V

55

160

15

3

MHz

O

80~160

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R214-014.C

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