TIP131 データシートの表示（PDF） - Inchange Semiconductor

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TIP131

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

TIP131

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= 4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 80V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 2.0V(Max)@ IC= 4A

·Complement to Type TIP136

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

12

A

IBB

Base Current- Continuous

Collector Power Dissipation

PC

@TC=25℃

Collector Power Dissipation

@Ta=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

0.3

A

70

W

2

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

1.785 ℃/W

Thermal Resistance,Junction to Ambient 63.5 ℃/W

isc Website：www.iscsemi.cn

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