BDV64A データシートの表示（PDF） - New Jersey Semiconductor

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BDV64A

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDV64

Collector-Emitter

V(BR)CEO Breakdown Voltage

BDV64A

BDV64B

i^— ^rimA- i«— n

BDV64C

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A;IB= -20mA

VBEIOR) Base-Emitter On Voltage

lc= -5A; VCE= -4V

ICEO

Collector Cutoff Current

VCE= /2VcEOmax; lB= 0

BDV64

VCB=-40V; lE=0;Tj=150"C

BDV64A VCB=-50V;lE=0;Tj=150-C

ICBO

Collector Cutoff Current

BDV64B VCB=-60V; lE=0;Tj=150r

BDV64C VCB=-70V;lE=0;Tj=150'C

ICBO

Collector Cutoff Current

VGB= VcBOmax; !E= 0

IEBO

Emitter Cutoff Current

VEB= -5V;lc= 0

hFE

DC Current Gain

lc= -5A; VCE= -4V

BDV64/A/B/C

MIN TYP. MAX UNIT

-60

-80

V

-100

-120

-2.0

V

-2.5

V

-2.0 mA

-2.0 mA

-0.4 mA

-5

mA

1000

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