SLVU2.8-8 データシートの表示（PDF） - Shanghai Semitech Semiconductor Co., Ltd

部品番号

コンポーネント説明

メーカー

SLVU2.8-8

Utralow Capacitance Transient Voltage Suppressors Array

Shanghai Semitech Semiconductor Co., Ltd 

SLVU2.8-8

Electrical Parameter

Symbol

Parameter

IPP

Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

IR

VSB

Reverse Stand-Off Voltage

Reverse Leakage Current @

VRWM

Snap-Back Voltage @ ISB

ISB

Snap-Back Current

VPT Punch-Through Voltage

IPT

Punch-Through Current

Electrical Characteristics

Parameter

Symbol

Reverse Stand-Off Voltage VRWM

Punch-Through Voltage

VPT

Snap-Back Voltage

VSB

Reverse Leakage Current

IR

Clamping Voltage

VC

Clamping Voltage

VC

Clamping Voltage

VC

Junction Capacitance

Cj

Fig2. SLVU2.8-8 IV Characteristic Curve

Conditions

IPT = 2uA

ISB = 50mA

VRWM =2.8V, T=25℃

(Each Line)

IPP =2A, tP=8/20us

(Each Line)

IPP =5A, tP=8/20us

(Each Line)

IPP =24A, tP=8/20us

(Each Line)

VR =0V, f =1MHz

(Each Line)

Minimum

3.0

2.8

Typical

7

Maximum

2.8

1

5.5

8.5

15

10

Units

V

V

V

uA

V

V

V

pF

Typical Characteristics

Fig3. Pulse Waveform

Fig4. Power Derating Curve

SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD

2.

Share Link: