HER1001GD(1995) データシートの表示（PDF） - Thinki Semiconductor Co., Ltd.

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HER1001GD
(Rev.:1995)

10Ampere Heat Sink Dual Doubler Polarity High Efficiency Rectifiers

Thinki Semiconductor Co., Ltd. 

HER1001GD thru HER1008GD

Pb Free Plating Product

HER1001GD thru HER1008GD

Pb

10Ampere Heat Sink Dual Doubler Polarity High Efficiency Rectifiers

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-220AB open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.0 gram approximately

TO-220AB/TO-220-3L

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.038(0.96)

.019(0.50)

.1(2.54)

.1(2.54)

.025(0.65)MAX

Case

Case

Case

Case

Positive

Common Cathode

Suffix "G"

Negative

Common Anode

Suffix "GA"

Doubler

Tandem Polarity

Suffix "GD"

Series

Tandem Polarity

Suffix "GS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

PARAMETER

HER HER HER HER HER HER HER HER

SYMBOL

UNIT

1001GD 1002GD 1003GD 1004GD 1005GD 1006GD 1007GD 1008GD

Maximum repetitive peak reverse voltage

VRRM

50

100

200

300

400

600

800 1000

V

Maximum RMS voltage

VRMS

35

70

140 210 280 420 560 700

V

Maximum DC blocking voltage

VDC

50

100

200

300

400

600

800 1000

V

Maximum average forward rectified current

IF(AV)

10

A

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

IFSM

125

A

Maximum instantaneous forward voltage (Note 1)

@5A

VF

1.0

1.3

1.7

V

Maximum reverse current @ rated VR

TJ=25°C

TJ=125°C

IR

Maximum reverse recovery time (Note 2)

trr

Typical junction capacitance (Note 3)

CJ

Typical thermal resistance

RθJC

Operating junction temperature range

TJ

Storage temperature range

TSTG

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A

Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.

10

400

50

60

1.5

- 55 to +150

- 55 to +150

μA

80

ns

40

pF

°C/W

°C

°C

Rev.09T

© 1995 Thinki Semiconductor Co., Ltd.

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http://www.thinkisemi.com.tw/

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