WFU4N60 データシートの表示（PDF） - Wisdom technologies
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WFU4N60 Datasheet PDF : 6 Pages
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HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0
600
--
--
V
△BVDSS/ Breakdown Voltage Temperature
△TJ Conficient
ID=250μA,Reference
to 25℃
--
0.6
--
V/℃
Vds=500V, Vgs=0V
--
--
1
μA
IDSS Zero Gate Voltage Drain Current Vds=480V, Tc=125℃
10 μA
IGSSF Gate-body leakage Current,
Vgs=+30V, Vds=0V
--
-- 100 nA
Forward
IGSSR Gate-body leakage Current,
Vgs=-30V, Vds=0V
--
-- -100 nA
Reverse
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=2.0A,Vgs=10V
2
--
4
V
--
--
2.5
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V，VGS=0，
f=1.0MHz
--
515 670
pF
--
55 72
pF
--
6.5 8.5
pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
--
150 30
nS
VDD=300V，ID=4A，
--
42 90
nS
RG=25Ω (Note 3,4)
--
38 85
nS
--
46 100 nS
--
15 19
nC
VDS=480,VGS=10V，
--
2.
--
nC
ID=4A (Note 3,4)
6.6
--
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes
Maximun Continuous Drain-Sourse Diode Forward Current
--
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Id=4A
--
Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS=4A,VGS =0V
--
diF/dt=100A/μs (Note3)
--
1, L=27.5mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
--
4
A
--
16
A
-- 1.25
V
300 --
nS
2.2
--
μC
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Rev.A0,August , 2010 | 2
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