TPDV1025 データシートの表示（PDF） - STMicroelectronics
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TPDV1025 Datasheet PDF : 7 Pages
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TPDVxx25
Characteristics
Table 4. Gate characteristics (maximum values)
Symbol
Parameter
PG(AV)
PGM
IGM
VGM
Average gate power dissipation
Peak gate power dissipation
Peak gate current
Peak positive gate voltage
tp = 20 µs
tp = 20 µs
tp = 20 µs
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-a)
Rth(j-c) DC
Rth(j-c) AC
Junction to ambient
Junction to case for DC
Junction to case for 360 °Conduction angle (F = 50 Hz)
Value
Unit
1
W
40
W
8
A
16
V
Value
50
1.5
1.1
Unit
°C/W
°C/W
°C/W
Figure 1.
P(W)
40
Max. rms power dissipation versus Figure 2.
on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)
Max. rms power dissipation and
max. allowable temperatures
(Tamb and Tcase) for various Rth
P(W)
40
Rth case to ambient - Rth = 1.5°C/W
Rth = 1°C/W Rth = 0.5°C/W Rth = 0°C/W
Tcase(°C)
85
30
20
10
0
0
α = 120°
α = 180°
α = 60°
α = 30°
α = 90°
IT(RMS)(A)
5
10
15
180°
α
α
20
25
30
95
20
105
10
115
Tamb(°C)
0
125
0
20
40
60
80
100
120
140
Figure 3. On-state rms current versus case Figure 4. Relative variation of thermal
temperature
impedance versus pulse duration
IT(RMS)(A)
30
25
α = 180°
K=[Zth(j-c)/Rth(j-c)]
1.00
Zth(j-c)
20
0.10
15
Zth(j-a)
10
0.01
5
Tcase(°C)
tp(s)
0
0.0
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 1E+3
Doc ID 18268 Rev 2
3/7
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