1SS190 データシートの表示（PDF） - Galaxy Semi-Conductor

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1SS190

Surface mount switching diode

Galaxy Semi-Conductor 

Production specification

Surface mount switching diode

FEATURES

 Low forward voltage

VF=0.92V(typ).

 Small total capacitance:CT=2.2pF(typ).

 Fast reverse recovery time:trr=1.6ns(typ)

Pb

Lead-free

1SS190

APPLICATIONS

 High speed switching application.

SOT-23

ORDERING INFORMATION

Type No.

Marking

1SS190

E3

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Limits

Unit

Non-Repetitive Peak Reverse Voltage

DC Reverse Voltage

Forward Output current

Surge current

Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

VRM

VR

Io

IFSM

Pd

Tj

TSTG

85

V

80

V

100

mA

2

A

350

mW

150

℃

-55 to +150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Reverse Leakage Current

Total Capacitance

Reverse Recovery Time

Symbol Min Typ

V(BR)R

VF

80

-

- 0.61

- 0.74

- 0.92

IR

-

-

CT

-

2.2

trr

-

1.6

MAX

-

-

-

1.2

0.1

0.5

4.0

4.0

UNIT Test Condition

V IR= 100μA

IF=1mA

V IF=10mA

IF=100mA

μA VR=30V

VR=80V

pF VR=0V,f=1.0MHz

ns IF=IR=10mAIrr=0.1*IR

C004

Rev.A

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