ATP106 データシートの表示（PDF） - ON Semiconductor

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ATP106

P-Channel Power MOSFET

ON Semiconductor 

ATP106

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=--1mA, VGS=0V

VDS=--40V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--15A

ID=--15A, VGS=--10V

ID=--8A, VGS=--4.5V

VDS=--20V, f=1MHz

See specified Test Circuit.

VDS=--20V, VGS=--10V, ID=--30A

IS=--30A, VGS=0V

Switching Time Test Circuit

VIN

0V

--10V

VIN

PW=10μs

D.C.≤1%

G

VDD= --20V

ID= --15A

RL=1.33Ω

D

VOUT

ATP106

P.G

50Ω

S

Ratings

Unit

min

typ

max

--40

V

--1

μA

±10

μA

--1.5

--2.6

V

28

S

19

25 mΩ

29

41 mΩ

1380

pF

210

pF

150

pF

12

ns

120

ns

110

ns

90

ns

29

nC

6.4

nC

5.9

nC

--0.97

--1.5

V

Ordering Information

Device

ATP106-TL-H

Package

ATPAK

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1597-2/7

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