BSW68A データシートの表示（PDF） - New Jersey Semiconductor
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BSW68A Datasheet PDF : 4 Pages
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NPN switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
Ic
ICM
IBM
Plot
Tstg
Tj
' amb
collector-base voltage
BSW66A
BSW67A
BSW68A
collector-emitter voltage
BSW66A
BSW67A
BSW68A
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
tp < 20 ms
Tamb < 25 °C
Tcase •£ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
free air
MIN.
MAX.
UNIT
-
100
V
-
120
V
-
150
V
-
100
V
-
120
V
-
150
V
-
6
V
-
1
A
-
2
A
-
200
mA
-
800
mW
-
5
W
-65
+150
°C
-
200
°C
-65
+150
°C
VALUE
220
35
UNIT
K/W
K/W
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