BSW68A データシートの表示（PDF） - New Jersey Semiconductor
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BSW68A Datasheet PDF : 4 Pages
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NPN switching transistors
CHARACTERISTICS
TJ = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
ICBO
collector cut-off current
BSW66A
IE = 0; VCB = 50 V
lE = 0;VCB = 50V;Tj = 150°C
IE = 0; VCB= 100V
_
_
-
-
-
-
ICBO
collector cut-off current
BSW67A
IE = 0; VCB = 60 V
lE = 0;VcB = 60V;Tj = 150°C
-
-
ICBO
IEBO
HFE
VcEsat
VBESSI
Cc
Ce
fl
IE = 0; VCB = 120V
-
-
collector cut-off current
BSW68A
IE = 0; VCB = 75 V
lE = 0;VCB = 75V;Tj = 150°C
-
-
IE = 0; VCB= 150V
-
-
emitter cut-off current
lc = 0; VEB = 3 V
-
-
Ic = 0; VEB = 6 V
-
-
DC current gain
VCE = 5 V
lc=10mA
30
lc = 100mA
40 -
lc = 500 mA
30
lc = 1 A
10
collector-emitter saturation voltage lc = 100 mA; IB = 10 mA
-
-
lc = 500 mA; IB = 50 mA
-
-
lc = 1 A; IB = 150mA
-
-
base-emitter saturation voltage lc = 100mA; IB = 10mA
-
-
lc = 500 mA; IB = 50mA
-
-
l c = 1 A; IB= 150mA
-
-
collector capacitance
lE = ie = 0 ; V C B = 1 0 V ; f = 1MHz
-
-
emitter capacitance
lc = ic = 0;VEB = 0 ; f = 1 MHz
-
-
transition frequency
lc = 100 mA; VCE = 20 V; f = 100MHz -
130
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
Icon - 500 mA; lBon = 50 mA;
Ifioff = -50 mA
-
500
-
900
MAX. UNIT
100 nA
50 HA
100 HA
100 nA
50 HA
100 HA
100 nA
50 HA
100 HA
100 nA
100 HA
-
150 mV
400 mV
1
V
900 mV
1.1 V
1.4 V
20 pF
300 pF
-
MHz
-
ns
-
ns
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