BSW68 データシートの表示（PDF） - TT Electronics.
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BSW68 Datasheet PDF : 3 Pages
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SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSW68
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
ICBO
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
IC = 10mA
VCB = 75V
IB = 0
IE = 0
TA = 150°C
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
IC = 0.1A
IC = 0.5A
IC = 1.0A
IB = 0.01A
IB = 0.05A
IB = 0.15A
VBE(sat)(1)
Base-Emitter Saturation
Voltage
IC = 0.1A
IC = 0.5A
IC = 1.0A
IB = 0.01A
IB = 0.05A
IB = 0.15A
hFE(1)
Forward-current transfer
ratio
IC = 0.1A
IC = 0.5A
IC = 1.0A
VCE = 5V
VCE = 5V
VCE = 5V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Output Capacitance
Cibo
Input Capacitance
ton
Turn-On Time
toff
Turn-Off Time
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
IC = 100mA
VCE = 20V
f = 1.0MHz
VCB = 10V
IE = 0
f = 1.0MHz
VEB = 0V
IC = 0
f = 1.0MHz
IC = 0.5A
VCC = 20V
IB1 = 0.05A
IC = 0.5A
VCC = 20V
IB1 = - IB2 = 0.05A
Min. Typ Max. Units
150
V
0.1
µA
50
0.15
0.5
1.0
V
0.9
1.1
1.2
40
30
15
30
MHz
35
pF
1000
1.0
µs
3
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 6056
Website: http://www.semelab-tt.com
Issue 2
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