MRF342 データシートの表示（PDF） - New Jersey Semiconductor
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MRF342 Datasheet PDF : 1 Pages
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, Ltna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SILICON
TELEPHONE: (973) 376-2922
MRF342
(212) 227-6005
FAX: (973) 376-8960
POWER NPN TRANSISTOR
DESCRIPTION:
MRF342 is designed for
VHP amplifier applications operating to
150MHz.
MAXIMUM RATINGS
Ic
3.0 A
VCEO
35V
VCBO
65V
VEBO
4.0V
PDISS
55 W @ Tc = 25 °C
Tj
-55 °C to +150 °C
TSTG
-55 °C to +150 °C
6jc
3.2 °C/W
PACKAGE STYLE TO-220AB
S
I— B
i?
!- c
l
T
t
I
_i.
4) rQ
.,-' 1
A
J1
.^ •^- -V i
3
V I
—ID—
H
-U i K
'I W
t
SECT A A
_ I t
L 1_R
-~— Uj
i^ ^G
o— U
1N
1 - Base 2 = Emitter 2 - (Collector
4 = Emitter
MILLIMETERS
INCHES
DIM MIN T MAX MIN MAX
A 15.11 15.75 ol5s jygo
9.65 10.28 TT3IT o'.*&5~
' h 4.06 4.32 0.160 0.190
0 0.64 0,89 0.025 0.035
f 361 3.73 0.142 0.147
^_C ^ 2.41 2.67 0.095 0.105
H 2.79 3.30 0110 0.130
: J 0,36 0.56 0.014 0.022
K ; 12.70 14.27 0.500 0.562
L 1.14 1.27 0045 0.050
juaa. N~" 4.83 5.33
0.210
i Q 2.54
LB. .2M
3.04 0,100 0.120
2.79 0.080 0.110
! S 1.14
1.39 6.045 0.055
T 5.97 6.48 0.235 0.255
_U_j 0.76 1.27 Q.030 0.050
_V.. TIT
0.045
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MINIMUM
BVcEo
lc = 20 mA
35
BVCES
lc = 20mA
65
BVCBO
lc = 20 mA
65
BVEBO
IE = 2.0 mA
4.0
ICES
VCE = 27 V
hFE
VCE = 5.0V
IC = 1.0A
10
COB
VCB = 27V
f = 1.0 MHz
GPE
Vcc= 13.5V POUT = 6.0 W f= 136MHz
10
GPE
11
VCC = 27V
POUT = 24 W f= 136 MHz
TIC
50
TYPICAL
20
11.5
12.3
60
MAXIMUM
2.0
100
30
UNITS
V
V
V
V
mA
—
PF
dB
dB
%
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Senii-Conductors encourages customers to verify that datasheetsnre current before placina orders.
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