1N5829 データシートの表示（PDF） - GeneSiC Semiconductor, Inc.
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1N5829 Datasheet PDF : 3 Pages
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Silicon Power
Schottky Diode
1N5829 thru 1N5831R
VRRM = 20 V - 40 V
IF = 25 A
Features
• High Surge Capability
• Types up to 40V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
AC
CA
Stud Stud
(R)
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N5829 (R)
1N5830 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 100 °C
TC = 25 °C, tp = 8.3 ms
20
14
20
25
800
-55 to 150
-55 to 150
25
17
25
25
800
-55 to 150
-55 to 150
1N5831 (R)
35
25
35
25
800
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N5829 (R)
Diode forward voltage
VF
IF = 25 A, Tj = 25 °C
0.58
Reverse current
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
2
250
Thermal characteristics
Thermal resistance, junction -
case
RthJC
1.8
1N5830 (R)
0.58
2
250
1.8
1N5831 (R)
0.58
2
250
1.8
Unit
V
V
V
A
A
°C
°C
Unit
V
mA
°C/W
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/1n5829.pdf
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