IRF9140 データシートの表示（PDF） - Intersil

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IRF9140

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

Intersil 

IRF9140

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ID

ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRF9140

-100

-100

-19

-12

-76

±20

125

1

960

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

Drain to Source Breakdown Voltage

Gate to Threshold Voltage

Zero Gate Voltage Drain Current

On-State Drain Current (Note 2)

BVDSS

VGS(TH)

IDSS

ID(ON)

VGS = 0V, ID = -250µA (Figure 10)

VGS = VDS, ID = -250µA

VDS = Rated BVDSS, VGS = 0V

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC

VDS > ID(ON) x rDS(ON) Max, VGS = -10V

(Figure 7)

Gate to Source Leakage

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

IGSS

rDS(ON)

gfs

td(ON)

tr

td(OFF)

tf

Qg(TOT)

Qgs

Qgd

CISS

COSS

CRSS

LD

VGS = ±20V

VGS = -10V, ID = -10A (Figures 8, 9)

VDS > ID(ON) x rDS(ON) Max, ID = -10A

VDD = -50V, ID ≈ −19A, RG = 9.1Ω, RL = 2.3Ω

(Figures 17, 18) MOSFET Switching Times are

Essentially Independent of Operating Temperature

VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS,

Ig (REF) = -1.5mA (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

VGS = 0V, VDS = -25V, f = 1.0MHz

(Figure 10)

Measured Between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins

and the Center of Die

Modified MOSFET Sym-

bol Showing the Internal

Devices

Inductances

D

Internal Source Inductance

LS

Measured From The

LD

Source Lead, 6mm

(0.25in) From the Flange G

and the Source Bonding

LS

Pad

S

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RθJC

RθJA

Free Air Operation

MIN

-100

-2.0

-

-

-19

-

-

5.0

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TYP

-

-

-

-

-

-

0.15

7.0

16

65

47

28

70

14

56

1100

550

250

5.0

12.5

-

-

MAX

-

-4.0

-25

-250

-

UNITS

V

V

µA

µA

A

±100 nA

0.20

Ω

-

S

20

ns

100 ns

70

ns

90

ns

90

nC

-

nC

-

nC

-

pF

-

pF

-

pF

-

nH

-

nH

1

oC/W

30 oC/W

5-15

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