IRF9140 データシートの表示（PDF） - Intersil
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IRF9140 Datasheet PDF : 7 Pages
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IRF9140
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
Modified MOSFET
Symbol Showing the In-
D
ISDM tegral Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
-19
A
-
-
-76
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = -19A, VGS = 0V
TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -19A, dISD/dt = 100A/µs
-
-
-1.5
V
-
170
-
ns
-
0.8
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 4µH, RG = 25Ω, peak IAS = 19A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-20
-15
-10
-5
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5-16
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